Toshiba 2SC3112
TRANSISTOR
| Part No. | 2SC3112 |
|---|---|
| Datasheet | 2SC3112 Download |
| Manufacturer |  Toshiba |
| Description | TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
●●
● High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 400 125 −55~125 Unit V V V mA mA mW °C °C JEDEC TO-92 JEITA SC-43 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.21 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
