Toshiba 2SC3113
Silicon NPN Transistor
| Part No. | 2SC3113 |
|---|---|
| Datasheet | 2SC3113 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High DC current gain: hFE = 600~3600
● High breakdown voltage: VCEO = 50 V
● High collector current: IC = 150 mA (max)
● Small package
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 200 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure ICBO IEBO VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) IC = 100 mA, IB = 10 mA fT VCE = 10 V, IC = 10 mA Cob NF (1) NF (2) VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW Note: hFE classification A: 600~1800, B: 1200~3600 Min Typ.
