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2SC3236 - Silicon NPN Transistor

Datasheet Summary

Features

  • . Excellent Switching Times : t r =1.0^s(Max. ), tf=l . 0#s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V.

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Datasheet Details

Part number 2SC3236
Manufacturer Toshiba
File Size 112.60 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3236 Datasheet
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Full PDF Text Transcription

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2SC3236 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r =1.0^s(Max.), tf=l . 0#s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V INDUSTRIAL APPLICATIONS Unit in mm 10l3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 500 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO Collector Current Base Current Collector Power Dissipation DC Pulse Ta = 25°( Tc=25 C IC ICP IB 1.7 60 1. BASE 2. COLLECTOR i^HEAT SINK) 3. EMITTER Junction Temperature Ti 150 Storage Temperature Range -stg ELECTRICAL CHARACTERISTICS (Ta=25 C) -55-150 TOSHIBA Weight : 2.
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