• Part: 2SC3236
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 112.60 KB
Download 2SC3236 Datasheet PDF
Toshiba
2SC3236
FEATURES . Excellent Switching Times : t r =1.0^s(Max.), tf=l . 0#s(Max. ) at Ic=4A . High Collector Breakdown Voltage : Vc EO=400V INDUSTRIAL APPLICATIONS Unit in mm 10l3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Base Current Collector Power Dissipation DC Pulse Ta = 25°( Tc=25 C IC ICP IB 1.7 60 1. BASE 2. COLLECTOR i^HEAT SINK) 3. EMITTER Junction Temperature Ti 150 Storage Temperature Range -stg ELECTRICAL CHARACTERISTICS (Ta=25 C) -55-150 TOSHIBA Weight : 2.i CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION ICBO l EBO V C B=400V, I E=0 VEB=7V, I C=0 v (BR)CBO I C =lm A, I...