2SC3236 - Silicon NPN Transistor

Toshiba

Key Features

. Excellent Switching Times : t r =1.0^s(Max. ), tf=l . 0#s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V.

2SC3236 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3236
Manufacturer	Toshiba
File Size	112.60 KB
Description	Silicon NPN Transistor
Datasheet	2SC3236 Datasheet

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Full PDF Text Transcription (Reference)

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2SC3236 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r =1.0^s(Max.), tf=l . 0#s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V INDUSTRIAL APPLICATIONS Unit in mm 10l3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 500 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO Collector Current Base Current Collector Power Dissipation DC Pulse Ta = 25°( Tc=25 C IC ICP IB 1.7 60 1. BASE 2. COLLECTOR i^HEAT SINK) 3. EMITTER Junction Temperature Ti 150 Storage Temperature Range -stg ELECTRICAL CHARACTERISTICS (Ta=25 C) -55-150 TOSHIBA Weight : 2.