Toshiba 2SC3239
Silicon NPN Transistor
APPLICATIONS
.FEATURES
. Low Collector Saturation Voltage : V CE ( S at)=0.4V(Max.) (at I C=3A) . High Speed Switching Time : t stg=1.0/is(Typ. . Complementary to 2SA1279 INDUSTRIALAPPLICATIONS
Unit in mm 10. 3 MAX. 03.2x0.2*MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VcBO VcEO 60 50 Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB TstgELECTRICAL CHARACTERISTICS
(Ta=25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage lEBO V (BR) CEO 25 150 -55~150 1. BASE 2. COLLECTOR (HEAT SINK] 3. EMITTER JEDEC EIAJ TOSHIBA Weight : 2 2-10K1A TEST CONDITION MIN. TYP. MAX. UNIT VCB=50V, I E=0 VEB=5V, I C=0 f-k fik IC=10mA, Ib=0 50 DC Current Gain Saturation Coll