2SC3239 - Silicon NPN Transistor

Toshiba

Key Features

. Low Collector Saturation Voltage : V CE ( S at)=0.4V(Max. ) (at I C=3A) . High Speed Switching Time : t stg=1.0/is(Typ. . Complementary to 2SA1279.

2SC3239 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3239
Manufacturer	Toshiba
File Size	121.54 KB
Description	Silicon NPN Transistor
Datasheet	2SC3239 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . 2SC3239 HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : V CE ( S at)=0.4V(Max.) (at I C=3A) . High Speed Switching Time : t stg=1.0/is(Typ. . Complementary to 2SA1279 INDUSTRIAL APPLICATIONS Unit in mm 10. 3 MAX. 03.2x0.2* MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VcBO VcEO 60 50 Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB Tstg ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage lEBO V (BR) CEO 25 150 -55~150 1. BASE 2.