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2SC3324 Datasheet PDF

Toshiba 2SC3324

Silicon NPN TRANSISTOR

Part No. 2SC3324
Datasheet 2SC3324 Download
Manufacturer
Toshiba
Description Silicon NPN TRANSISTOR
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2SC3324 datasheet page 1 preview

APPLICATIONS

● High voltage: VCEO = 120 V
● Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.)
● High hFE: hFE = 200 to 700
● Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
● Complementary to 2SA1312
● Small package 2SC3324 Unit: mm

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 120 V VCEO 120 V VEBO 5 V IC 100 mA IB 20 mA PC (Note 1,2) 200 mW Tj (Note 2) 150 °C Tstg (Note 2) 55 to 150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
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