Toshiba 2SC3329
Silicon NPN TRANSISTOR
| Part No. | 2SC3329 |
|---|---|
| Datasheet | 2SC3329 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
and Recommended for The First Stages of MC Head Amplifiers 2SC3329 Unit: mm● Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
● Low pulse noise. Low 1/f noise
● Low base spreading resistance: rbb’ = 2.0 Ω (typ.)
● Complementary to 2SA1316
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 100 20 400 125 -55~125ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Unit V V V mA mA mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector o...
