• Part: 2SC3344
  • Description: SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 142.20 KB
Download 2SC3344 Datasheet PDF
Toshiba
2SC3344
FEATURES . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0>us(Max. ) . High Collector Breakdown Voltage : at Ic=4A Vc EO=400V INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2x0.2 czil / ^<j i»>C ,1 n d H oci +1 i-" o i-H MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse SYMBOL VCBO Vc EO VEBO IC ICP RATING 500 400 UNIT + Q25 aye -0.15 2.54 + 0.25 J[ a" s il rf .! 1 -v - 2.54 ± a 25 ->1 dc S +1 =€!& Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB PC 1.7...