. Low Collector Saturation Voltage
: VC E(sat)=0..4V(Max. ) (at Ic=6A) . High Speed Switching Time : t s tg=1.0^s (Typ. ) . Complementary to 2SA1328
Unit in mm
10.3 MAX. 03.6±O.2
/
s
of x'
Mr
X 5
T
to
MIN.
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3345
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . Low Collector Saturation Voltage
: VC E(sat)=0..4V(Max.) (at Ic=6A) . High Speed Switching Time : t s tg=1.0^s (Typ.) . Complementary to 2SA1328
Unit in mm
10.3 MAX. 03.6±O.2
/
s
of x'
Mr
X 5
T
to
MIN.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VcEO vebo ic IB
PC
TJ T stg
ELECTRICAL :HARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
1.5 MAX
13.0
RATING 60
UNIT V
|W
X
2.54
2.5 4
>
< s
50
V
lO
1
CO
r-i
l»—
6
V
: -1 - 3-
12
A
2
A
1. BASE 2.
2SC3345 Datasheet
