2SC3345 Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3345 HIGH CURRENT SWITCHING APPLICATIONS.
2SC3345 Key Features
- 55-150 °C TOSHIBA
- 0.25 0.4 V
- 0.9 1.2
- Note : hpE(l) Classification
- 2SC3345
- °#Z °°rJ
- MON EMITTER Tc=-5 5°C
- MUJN JJJMl I"1'JtUK