Toshiba 2SC3419
Silicon NPN Transistor
| Part No. | 2SC3419 |
|---|---|
| Datasheet | 2SC3419 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
. 2SC3419 Unit: mm● Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA)
● High collector power dissipation: PC = 1.2 W (Ta = 25°C)
● Complementary to 2SA1356
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 40 V VCEO 40 V Emitter-base voltage Collector current Base current VEBO IC IB 5V 800 mA 80 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.2 W 5 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewi...
