Toshiba 2SC3669
Silicon NPN Epitaxial Type TRANSISTOR
| Part No. | 2SC3669 |
|---|---|
| Datasheet | 2SC3669 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Type TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Power SwitchingAPPLICATIONS
2SC3669 Unit: mm● Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
● High-speed switching: tstg = 1.0 μs (typ.)
● Complementary to 2SA1429
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 80 5 2 1 1000 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.2 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba...
