Toshiba 2SC3672
Silicon NPN Transistor
| Part No. | 2SC3672 |
|---|---|
| Datasheet | 2SC3672 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Plasma Display, Nixie Tube DriverAPPLICATIONS
Cathode Ray Tube Brightness ControlAPPLICATIONS
Unit: mm● High breakdown voltage: VCBO = 300 V, VCEO = 300 V
● Low saturation voltage: VCE (sat) = 0.5 V (max)
● Small collector output capacitance: Cob = 3 pF (typ.)
● Complementary to 2SA1432.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 300 300 6 100 20 1000 150 −55 to 150 V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
