Toshiba 2SC3673
Silicon NPN Transistor
| Part No. | 2SC3673 |
|---|---|
| Datasheet | 2SC3673 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Solenoid DriveAPPLICATIONS
2SC3673 Unit: mm● High DC current gain : hFE = 500 (min) (IC = 400 mA)
● Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1000 mW JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.2 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi...
