Toshiba 2SC4118
Silicon NPN Transistor
2SC4118 Specifications
- Max Collector Current : 500mA
- Terminals : 3
- Collector Emitter Voltage : 30V
- Collector Emitter Saturation Voltage : 250mV
- Max Power Dissipation : 100mW
- Max Operating Temp : 125°C
Source:
Octopart
APPLICATIONS
Driver Stage AmplifierAPPLICATIONS
SwitchingAPPLICATIONS
2SC4118 Unit: mm● Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
● Complementary to 2SA1588
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature PC 100 mW JEDEC ― Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in Weight: 0.006 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semicon...