Toshiba 2SC4244
Silicon NPN Transistor
APPLICATIONS
Unit: mm● Low noise figure: NF = 4dB (typ.)
● High power gain: Gpb = 17dB (typ.)
● Excellent forward AGC characteristics
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 25 20 2 4 20 100 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Reverse transfer capacitance Power gain Noise figure AGC voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE fT Crb Gpe NF VAGC VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 3 V, IC = 1 mA VCE = 3 V, IC = 1 mA VCE = 2 V, IB = 0, f = 1 MHz VCC = 4.5 V, VAGC = 2.0 V f = 800 MHz (Figure 1) VC...