Toshiba 2SC4248
Silicon NPN Transistor
| Part No. | 2SC4248 |
|---|---|
| Datasheet | 2SC4248 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
(common collector) 2SC4248 Unit: mm● Transition frequency is high and dependent on current excellently.
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 15 30 100 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Output capacitance Collector-base time constant Symbol Test Condition ICBO IEBO V (BR) CEO hFE fT Cob Cc･rbb’ VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 5 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 12 ¾ ¾ V 7...
