Toshiba 2SC4666
Silicon NPN TRANSISTOR
| Part No. | 2SC4666 |
|---|---|
| Datasheet | 2SC4666 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
SwitchingAPPLICATIONS
● High hFE: hFE = 600~3600● High voltage: VCEO = 50 V
● High collector current: IC = 150 mA (max)
● Small package Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 −55~125 Unit V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA SC-70 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2E1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.006 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
