Toshiba 2SC4667
Silicon NPN TRANSISTOR
| Part No. | 2SC4667 |
|---|---|
| Datasheet | 2SC4667 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Computer, CounterAPPLICATIONS
2SC4667 Unit: mm● High transition frequency: fT = 400 MHz (typ.)
● Low saturation voltage: VCE (sat) = 0.3 V (max)
● High speed switching time: tstg = 15 ns (typ.)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage Emitter-base voltage Collector current Base current VCEO VEBO IC IB 15 V 5V 200 mA 40 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing th...
