Toshiba 2SC4881
NPN TRANSISTOR
| Part No. | 2SC4881 |
|---|---|
| Datasheet | 2SC4881 Download |
| Manufacturer |  Toshiba |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
2SC4881 Unit: mm● Low saturation voltage: VCE (sat) = 0.4 V (max)
● High-speed switching: tstg = 0.8 μs (typ.)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current DC IC 5 A Pulse ICP 8 Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
