Toshiba 2SC503
Silicon NPN Epitaxial Type Transistor
| Part No. | 2SC503 |
|---|---|
| Datasheet | 2SC503 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Type Transistor |
| Buy | Stock & Price |
APPLICATIONS
. HIGH SPEED SWITCHINGAPPLICATIONS
.FEATURES
● High Transition Frequency : fx=80MHz (Typ.)● High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II 05.08
MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Collector-Base 2SC503 Voltage 2SC504 Collector- Emitter Voltage 2SC503 2SC504 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO vebo ic IB PC T i T Htg RATING 100 80 80 60 5 600 100 800 6 175 -65^175 UNIT V /] O \ \kO // \3 I V 1. EMITTER V 2. BASE 3. COLLECTOR(CASE) mA mA JEDEC TO — 39 mW EIAJ TC — 5, TB — 5B W TOSHIBA 2 — 8B1A °C Weight : 1.13g °c ELECTRICAL CHARACTER ISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. Collector Cut-off Current 2SC503 2SC504 I CB0 VCB=80V, I E=0 VCB=60V, I E=0 - Emitter Cut-off Current lEBO VEB=5V, I C =0 - DC Current Gain h F...
