Toshiba 2SC5030
NPN TRANSISTOR
| Part No. | 2SC5030 |
|---|---|
| Datasheet | 2SC5030 Download |
| Manufacturer |  Toshiba |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Medium Power AmplifierAPPLICATIONS
Unit: mm●
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● High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.3 W
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage DC I Collector current Pulse (Note) Base current Collector power dissipation Junction temperature Storage temperature range mbol VCBO VCES VCEO 20 VEBO C Rating 50 40 Unit V V V 8 5 8 0.5 3 150 −55 to 150 JEDEC A ― ― 8M1A ICP IB PC 1. Tj Tstg JEITA TOSHIBA 2- A W °C °C Weight: 0.55 g (typ.) Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Sy Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition f...
