High Breakdown Voltage
: VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504.
Unit in mm
09.39MAX. 08ASMA1( r 1
X < 5 d
^ I
l
^0.45
a
II
05.08.
The following content is an automatically extracted verbatim text
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View original datasheet text
:
2SC503 2SC504
I
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
FEATURES
• High Transition Frequency : fx=80MHz (Typ.) • High Breakdown Voltage
: VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504.
Unit in mm
09.39MAX.
08ASMA1( r 1
X < 5 d
^ I
l
^0.45
a
II
05.08
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base
2SC503
Voltage
2SC504
Collector- Emitter Voltage
2SC503 2SC504
Emitter-Base Voltage Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL v CBO
V CEO vebo ic IB PC
T i
T Htg
RATING 100 80 80 60
5
600 100 800
6
175 -65^175
UNIT V
/]
O kO //
3 I
V
1. EMITTER
V
2. BASE 3.
2SC504 Datasheet
