2SC507
2SC507 is SILICON NPN TRANSISTOR manufactured by Toshiba.
FEATURES
High Breakdown Voltage
: VCBO=170V, VCEO=120V High Gain and Excellent hpg Linearity
: I c= 100m A (Max.) High Transition Frequency : f T=250MHz (Typ. Low Output Capacitance : C b=2.8p F(Typ.
Unit iri mm
/Zfe.39MAX
08A5UAX
0OA5 1 a d
1I
H- a
05 =08
(' h
2"~N
3] ?
MAXIMUM RATING
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power
Ta=25°C
Dissipation
Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL Vn RO v CE0 Vr RO ic IB
T.i
Tstg
RATING 170 120
100 20
750 23
175 -65VL75
'/^
UNIT V V V m A m A m W
°C °C
JEDEC EIAJ
1. EMITTER 2. BASE 3. COLLECTOR(CASE)...
