2SC507 - SILICON NPN TRANSISTOR

Toshiba

Key Features

High Breakdown Voltage : VCBO=170V, VCEO=120V High Gain and Excellent hpg Linearity : I c= 100mA (Max. ) High Transition Frequency : f T=250MHz (Typ. Low Output Capacitance : C b=2.8pF(Typ. Unit iri mm /Zfe.39MAX 08A5UAX 0OA5 1 a d 1I H.
a 1 05 =08 (' h 2"~N 3] ?.

2SC507 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC507
Manufacturer	Toshiba
File Size	124.63 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC507 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: )) SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) VIDEO AMPLIFIER APPLICATIONS HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES High Breakdown Voltage : VCBO=170V, VCEO=120V High Gain and Excellent hpg Linearity : I c= 100mA (Max.) High Transition Frequency : f T=250MHz (Typ. Low Output Capacitance : C b=2.8pF(Typ. Unit iri mm /Zfe.39MAX 08A5UAX 0OA5 1 a d 1I H• a 1 05 =08 (' h 2"~N 3] ? MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VnRO v CE0 VrRO ic IB PC T.