Toshiba 2SC5201
NPN TRANSISTOR
APPLICATIONS
2SC5201 Unit: mm● High breakdown voltage: VCEO = 600 V
● Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 600 7 50 100 25 900 150 −55 to 150 V V V mA mA mW °C °C JEDEC JEITA TO-92MOD ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5J1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Han...