Toshiba 2SC5339
NPN TRANSISTOR
APPLICATIONS
Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.2 µs (Typ.) l Bult−in Damper Type l Collector Metal (Fin) is Fully Covered with Mold Resin.MAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 7 14 3.5 50 150 −55~150 EQUIVALENT CIRCUIT UNIT V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-16E3A Weight: 5.5 g (typ.) 1 2001-08-21ELECTRICAL CHARACTERISTICS
(Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time I...