Datasheet Details
| Part number | 2SC5339 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.17 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5339-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5339 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.17 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5339-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal output applications for medium resolution display & color TV.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A ICM Collector Current- Continuous 14 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC5339 isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5339 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5339 | NPN TRANSISTOR | Toshiba Semiconductor |
 |
2SC5339 | SILICON POWER TRANSISTOR | SavantIC |
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