2SC5339 Datasheet and Specifications PDF

The 2SC5339 is a NPN TRANSISTOR.

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Part Number2SC5339 Datasheet
ManufacturerToshiba
Overview 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Volta. urrent Gain Collector
*Emitter Saturation Voltage Base
*Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF fT Cob tstg tf VCB = 1500 V, IE.
Part Number2SC5339 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3P(H)IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV ·High speed switching. ter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=400mA ;IC=0 IC=5A; IB=1.25A IC=5A; I.
Part Number2SC5339 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and. se specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 .

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C5339 Toshiba 2SC5339