Toshiba 2SC5411
NPN TRANSISTOR
| Part No. | 2SC5411 |
|---|---|
| Datasheet | 2SC5411 Download |
| Manufacturer |  Toshiba |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm l Collector Metal (Fin) is Fully Covered with Mold Resin.MAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 14 28 7 60 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3A Weight: 5.5 g (typ.)ELECTRICAL CHARACTERISTICS
(Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time SYMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.
