Toshiba 2SC5857
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
| Part No. | 2SC5857 |
|---|---|
| Datasheet | 2SC5857 Download |
| Manufacturer |  Toshiba |
| Description | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 21 42 10.5 75 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3AELECTRICAL CHARACTERISTICS
(Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 9 A , IB1 (end) = 1.4 A fH = 32 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 45 kHz Weight: 5.5 g (typ.
