Toshiba 2SC5886
NPN Transistor
| Part No. | 2SC5886 |
|---|---|
| Datasheet | 2SC5886 Download |
| Manufacturer |  Toshiba |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
DC-DC ConverterAPPLICATIONS
2SC5886 Unit: mm● High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
● Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
● High-speed switching: tf = 55 ns (typ.)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 100 V 80 V 50 7 V 5 A 10 0.5 A 1 W 20 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please des...
