Toshiba 2SC6041
Silicon NPN Transistor
MAXIMUM RATINGS
(TC = 25°C) Characteristic Collector−base voltage Collector−emitter voltage Emitter−base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1700 750 5 15 30 7.5 70 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA Weight: 5.5 g (typ.) ― ― 2-16E3A Marking TOSHIBA C6041 Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 1 2006-06-20 Free Datasheet 2SC6041ELECTRICAL CHARACTERISTICS
(TC = 25°C) Characteristic Collector cutoff current Emitter cutoff current Emitter–base breakdown voltage Symbol ICBO IEBO V (BR) EBO hFE (1) DC current gain hFE (2) hFE (3) Collector–emitter saturation voltage Base–emitter saturation voltage Transition frequency Collector output capacitance Switching time Storage time Fall time VCE (sat) VBE (sat) fT Cob tstg tf Test Condition VCB = 1700 V, IE = 0 VEB = 5 V, I...