Toshiba 2SC6042
Silicon NPN Transistor
| Part No. | 2SC6042 |
|---|---|
| Datasheet | 2SC6042 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Switching RegulatorAPPLICATIONS
DC-DC ConverterAPPLICATIONS
●● High-speed switching: tf = 0.2 μs (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 800 800 375 8 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C 1. Base 2. Collector 3. Emitter JEDEC JEITA TOSHIBA ― ― 2-7D101A Weight: 0.2 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please d...
