Toshiba 2SC6077
Silicon NPN Transistor
| Part No. | 2SC6077 |
|---|---|
| Datasheet | 2SC6077 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
○ Power SwitchingAPPLICATIONS
●● Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 9 3.0 5.0 1.0 1.8 150 −55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range JEDEC JEITA TOSHIBA Weight:1.5g(typ) － － 2-10T1AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Rise time VCE (sat) (1) VCE (sat) (2) VBE (sat) fT C...
