• Part: 2SD1052
  • Description: NPN Transistor
  • Manufacturer: Toshiba
  • Size: 111.67 KB
Download 2SD1052 Datasheet PDF
2SD1052 page 2
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Datasheet Summary

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . Features : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.3MAX ^3.6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO vEB0 50 V Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range T-i Tstg 1. BASE 1.5 2. collector Cheat sink) 3. EMITTER 30 JEDEC 150 °C EIAJ TO- 220AB SC-...