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2SD1052 - NPN Transistor

Key Features

  • : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX. ) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.3MAX ^3.6±Q2.

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Datasheet Details

Part number 2SD1052
Manufacturer Toshiba
File Size 111.67 KB
Description NPN Transistor
Datasheet download datasheet 2SD1052 Datasheet

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2SD1052 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . FEATURES : . High DC Current Gain of 250 to 750 at VCE=5V, I C =0.5A . Low VcE(sat) of 1.0V (MAX.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 10.3MAX ^3.6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO vEB0 50 V 50 Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range IB T-i Tstg 0.5 1. BASE 1.5 2. collector Cheat sink) 3. EMITTER 30 JEDEC 150 °C EIAJ TO— 220AB SC—46 -55-150 °C TOSHIBA 2-10A1A ELECTRICAL CHARACTERISTICS (Ta=25°C) Mounting kit No.