• Part: 2SD1052A
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 110.55 KB
Download 2SD1052A Datasheet PDF
2SD1052A page 2
Page 2
2SD1052A page 3
Page 3

Datasheet Summary

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . Features : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL vCB0 vCE0 VEB0 ic RATING 50 50 UNIT V 0.7 6 . X < .2=5 4, 2.5 4 f «, % 2? Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range IB ?C stg 0.5 1.5 30 150 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) 3....