2SD1355
2SD1355 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax.
. plementary to 2SB995 . Remended for 30W High Fidelity Audicd Frequency
Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL Vc BO Vc EO Ve BO ic IB PC
T stg
RATING 100 100
5 5
0.5 40
UNIT V V V A A W
-55^150
°C °C
10/3 MAX
7.0 03.2 i 0.2
~g" r~-
/
'1
- <l to
<
)" c5
H to c5
» o s +o1 trf "3.
\\\, 1.2
»
H+ 0.25
0.7 s-ai5 ;
-- CO
2.543:0.25 too
2.54±a25 X < cici
+1 m
N- d
?- )/ cp a L...
