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2SD1355 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Complement to Type 2SB995 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

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Full PDF Text Transcription for 2SD1355 (Reference)

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown V...

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n Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB995 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.