Datasheet Details
| Part number | 2SD1352 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1352-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1352 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1352-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous 4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1352 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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