Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB997 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1357 | Toshiba | Silicon NPN Transistor |
| 2SD1355 | Toshiba | Silicon NPN Transistor |
| 2SD1354 | Toshiba | Silicon NPN Transistor |
| 2SD1359 | Toshiba | Silicon NPN Transistor |
| 2SD1358 | Toshiba | Silicon NPN Transistor |
| 2SD1356 | Toshiba | Silicon NPN Transistor |
| 2SD1353 | Toshiba | Silicon NPN Transistor |
| 2SD1351 | Inchange Semiconductor | Silicon NPN Power Transistors |
| 2SD1351 | Thinki Semiconductor | NPN Complementary Silicon Power Transistors |
