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2SD1357 - NPN Transistor

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Part number 2SD1357
Manufacturer INCHANGE
File Size 168.58 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB997 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect

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