Datasheet Details
| Part number | 2SD1357 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 168.58 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1357 Datasheet
|
|
|
General Description
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V
Complement to Type 2SB997
Minimum Lot-to-Lot variations for robust device
performance and re
