2SD1354
2SD1354 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High DC Current Gain : h FE=300(Max. ) (Vc E=5V, Ic=0.5A) . Low Saturation Voltage
: VC E(sat)=l-0V(Max.)(I C=3A, I B=0.3A) . High Power Dissipation : P C=30W (Tc=25 P C) . plementary to 2SB994
Unit in mm
03.2±O.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Vc BO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current ic
Base Current
Collector Power
Ta=25 C
Dissipation
Tc=25 C
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
Junction Temperature
Storage Temperature Range
L stg
-55-150
TOSHIBA
2-1 OKI A
Weight : 2.0g
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current l EBO
TEST CONDITION VCB=60V, I E=0 V E B=7V, I...
