2SD1354 - Silicon NPN Transistor

Toshiba

Key Features

. High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=0.5A) . Low Saturation Voltage : VC E(sat)=l-0V(Max. )(I C=3A, I B=0.3A) . High Power Dissipation : P C=30W (Tc=25 P C) . Complementary to 2SB994 Unit in mm 03.2±O.2.

2SD1354 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD1354
Manufacturer	Toshiba
File Size	89.17 KB
Description	Silicon NPN Transistor
Datasheet	2SD1354 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1350	Silicon NPN Transistor	Panasonic Semiconductor
2SD1350A	Silicon NPN Transistor	Panasonic Semiconductor
2SD1351	Silicon NPN Power Transistors	Inchange Semiconductor
2SD1351	NPN Complementary Silicon Power Transistors	Thinki Semiconductor
2SD1352	NPN Transistor	INCHANGE

Other Datasheets by Toshiba

Part Number	Description
2SD1353	Silicon NPN Transistor
2SD1355	Silicon NPN Transistor
2SD1356	Silicon NPN Transistor
2SD1357	Silicon NPN Transistor
2SD1358	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON NPN TRIPLE DIFFUSED TYPE 2SD1354 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=0.5A) . Low Saturation Voltage : VC E(sat)=l-0V(Max.)(I C=3A, I B=0.3A) . High Power Dissipation : P C=30W (Tc=25 P C) . Complementary to 2SB994 Unit in mm 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 60 Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO Collector Current ic Base Current IB 0.5 Collector Power Ta=25 C 1.5 Dissipation Tc=25 C 30 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature 150 Storage Temperature Range L stg -55-150 TOSHIBA 2-1 OKI A Weight : 2.