2SD1356
2SD1356 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Power Dissipation : P C=30W (Tc=25°C) . Good Linearity of h EE . plementary to 2SB996 . Remended for 20
- 25W High Fidelity Audio Frequency
Amplifier Output Stage.
Unit in mm 0&2±a2
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO v EBO ic IB
T j
T stg
RATING 80 80
5 4
UNIT V V V A A
30 W
-55-150
°C °C
1. BASE 2. collector Cheat sink) 3. EMITTER
TOSHIBA Weight : 2.1
2-10K.1A
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP.
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
ICB0 !e B0
V CB=80V, I E=0 V E B=5V, I C=0 v (BR)CE0 I c=50m A, I B=0 v...
