2SD1357
2SD1357 is Silicon NPN Transistor manufactured by Toshiba.
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
2SD1357 2SD1358
I2SD1359
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
FEATURESr . High DC Current Gain: h FE=20O0(Min. ) (at Vc E=3V, Ic=3A) . Low Saturation Voltage: Vc E(sat)=l
- 5V(Max. ) (at Ic=3A) . plementary to 2SB997, 2SB998, 2SB999
INDUSTRIAL APPLICATIONS Unit in mm
, j.Q.3Mjg :
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SD1357 2SD1358 2SD1359
Vc BO
Collector-Emitter Voltage
2SD1357 2SD1358 2SD1359
VCEO
Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
VEBO ic IB
?C
T.i
T fitg
Tt
^5k Q
ELECTRICAL CHARACTERISTICS (Ta=25°c)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
2SD1357 2SD1358 2SD1359
ICBO
Emitter Cut-off Current l EBO
Collector-Emitter Breakdwon Voltage
2SD1357 2SD1358
2SD1359
V (BR) CEO
DC Current Gain
Collector-Emitter...
