2SD1353
2SD1353 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low Vc E(sat) of 1 . 0V (Max.) at Ic=l A, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C
Unit in mm 0z.z±az
MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Vc BO
Collector-Emitter Voltage
Vc EO
Emitter-Base Voltage
VEBO
Collector Current ic
Base Current
Collector Power Dissipation
Ta=25°C Tc=25 C
0.5 1.5
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
Junction Temperature
Storage Temperature Range
Tstg
-55~150
TOSHIBA
2-10K1A
ELECTRICAL CHARACTERISTICS (Ta=25 C)
Weight : 2 . Og
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current Emitter Cut-off Current
ICBO l EBO
VCB=50V, Ie=0 V EB=7V, I C=0
- - 100
- - 100
Collector-Emitter Breakdown Voltage v (BR) CEO I c =50m A, I...
