2SD799 - Silicon NPN Transistor

Toshiba

Key Features

High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A).
Monolithic Construction with Built-in Base- Emitter Shunt Resistor.

2SD799 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD799
Manufacturer	Toshiba
File Size	116.82 KB
Description	Silicon NPN Transistor
Datasheet	2SD799 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD799 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A) • Monolithic Construction with Built-in Base- Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 10.5MAX ., _gf3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL v CBO V CEO v EBO ic IB ?C Tj Tstg RATING 600 400 5 6 1 UNIT V V V A A 30 W 150 °C -55M.50 °C COLLECTOR 1. BASE Z. COLLECTOR (HEAT SINK) 3.