• Part: 2SD798
  • Description: NPN Transistor
  • Manufacturer: Toshiba
  • Size: 118.25 KB
Download 2SD798 Datasheet PDF
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Datasheet Summary

: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) . IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. Features - High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm IQ.SMAX., ,03.6±a.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 °C °C 2.54 d P' J-. ?c ^ . L BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT =s2kn ! COLLECTOR...