2SD811
2SD811 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
- High Voltage : VCBO=900V
- High Peak Current Capability : Ic(Peak) = 10A
- High Speed Switching : tf=0.5ys (Max.)
Unit in mm
025OMAX.
X-
+ 009 010-003
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Base Voltage Collector Current (DC)
Peak Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Tempeature Range
SYMBOL VCBO VCEO v EBO ic
-"x peak PC T
T sts
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency
SYMBOL ICBO l EBO h FE(l) h FE(2) v CE(sat)
VBE(sat) Cob f T
Fall Time tf
Fig.
302±02
RATING 900 400
7 6
10 50 150 -65V150
UNIT V V V A A W
°C °C
+O08 040-015
1S9±Q2
2-0 <>?3T
1^
4Q0MAX
1. BASE 2. EMITTER
COLLECTOR...
