2SD811 - Silicon NPN Transistor

Toshiba

Key Features

High Voltage : VCBO=900V.
High Peak Current Capability : Ic(Peak) = 10A.
High Speed Switching : tf=0.5ys (Max. ) Unit in mm 025OMAX. X- + 009 010-003.

2SD811 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD811
Manufacturer	Toshiba
File Size	131.11 KB
Description	Silicon NPN Transistor
Datasheet	2SD811 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD81 HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES • High Voltage : VCBO=900V • High Peak Current Capability : Ic(Peak) = 10A • High Speed Switching : tf=0.5ys (Max.) Unit in mm 025OMAX.