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2SD820 - NPN Transistor

Key Features

  • High Voltage : VcBO=1500V.
  • Low Saturation Voltage : v CE(sat)=5V (Max. ) (I C =4A,.
  • High Speed : tf=1.0ys (Max. ) I B=0.8A).
  • Glass Passivated Collector-Base Junction. Unit in mm 025.OMAX , 021.OMAX + Q09 £10-0.03 W.

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Datasheet Details

Part number 2SD820
Manufacturer Toshiba
File Size 41.54 KB
Description NPN Transistor
Datasheet download datasheet 2SD820 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD820 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VcBO=1500V • Low Saturation Voltage : v CE(sat)=5V (Max.) (I C =4A, • High Speed : tf=1.0ys (Max.) I B=0.8A) • Glass Passivated Collector-Base Junction. Unit in mm 025.OMAX , 021.OMAX + Q09 £10-0.03 W MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING UNIT 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage Vebo 5V 1. BASE Collector Current Emitter Current ic 5A 2. EMITTER COLLECTOR (CASE) IE -5 A Collector Power Dissipation (Tc=25*0 Junction Temperature PC T J 50 W JEDEC 150 °C TO-3 TC-3, TB-3 Storage , Temperature Range Tstg -65M.50 °C Mounting kit No.