2SD821
Overview
- High Voltage : VCBO=1500V
- Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A)
- High Speed : t f =1.0us (Max.)
- Glass Passivated Collector-Base Junction. Unit in mm p*25.0MAX. £21.0 MAX . fQ09 £1.0-003 3Q2±02
| Part | 2SD821 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Toshiba |
| Size | 90.81 KB |