2SD868 - NPN Transistor

Toshiba

Key Features

. High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ . (IC=2A, Ib=0.6A) . High Speed : tf =1 .0>«s(Max. ) (ICP=2A, lBl(end)=0.6A).
Built-in Damper Type . Glass Passivated Collector-Base Junction. Unit in mm 025OMAX 02 1.0 MAX, + ao9 s 1.0.
0.03 TTT 30.2±0.2 MAX I MUn.

2SD868 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD868
Manufacturer	Toshiba
File Size	106.35 KB
Description	NPN Transistor
Datasheet	2SD868 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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:) SILICON NPN TRIPLE DIFFUSED MESA TYPE 3 2SD868 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ . (IC=2A, Ib=0.6A) . High Speed : tf =1 .0>«s(Max. ) (ICP=2A, lBl(end)=0.6A) • Built-in Damper Type . Glass Passivated Collector-Base Junction. Unit in mm 025OMAX 02 1.0 MAX, + ao9 s 1.0—0.03 TTT 30.2±0.2 MAX I MUn RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature EQUIVALENT CIRCUIT BASE o- SYMBOL VcBO VcEO VeBO ic IE RATING 1500 600 2.5 -2.5 PC 50 150 -stg -65~150 COLLECTOR UNIT 1. BASE 2.