2SK325 - Silicon N-Channel MOSFET

Toshiba

Key Features

. High Breakdown Voltage : V/gR) j)gg=450V . High Forward Transfer Admittance : | Yf s | =5S(Typ. . Low Leakage Current : lGSS =±100nA(Max. ) @ Vgs=±20V lDSS=lmA(Max. ) @ VdS=450V . Enhancement-Mode ~ : V t h=l . 5 3. 5V @ lD=lmA.

2SK325 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK325
Manufacturer	Toshiba
File Size	130.89 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK325 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: ) SILICON N CHANNEL MOS TYPE 0T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES . High Breakdown Voltage : V/gR) j)gg=450V . High Forward Transfer Admittance : | Yf s | =5S(Typ. . Low Leakage Current : lGSS =±100nA(Max. ) @ Vgs=±20V lDSS=lmA(Max.) @ VdS=450V . Enhancement-Mode ~ : V t h=l . 5 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX 450 Gate-Source Voltage V GSS ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID L DP ?D Teh Tsts ELECTRICAL CHARACTERISTICS (Ta=25°C) 10 15 120 150 -65 ~150 1. GATE 2.