Toshiba 2SK3878
N-Channel MOSFET
| Part No. | 2SK3878 |
|---|---|
| Datasheet | 2SK3878 Download |
| Manufacturer |  Toshiba |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)● High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
● Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
● Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 900 V 900 V ±30 V 9 A 27 150 W 778 mJ 9 A 15 mJ 150 °C −55 to 150 °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produ...
