Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
- High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit:...
